The Simulation-Based Prediction of Mould Growth Using Coupled Building and Fungal Models conducted by Klaas De Jonge, Luca Maton (UGent) has been presented at the AIVC webinar – Emerging Risks of Indoor Mould: Assessment Methods, In-Situ Measurements & Predictive Modelling last September.The study highlights how closely indoor environmental conditions, material properties and building design interact to determine mold risk. Using the Finnish mold growth model together with thermal bridge simulation and indoor climate modelling, the researchers demonstrate how even small design choices can drastically influence mold development, especially in heritage buildings.Building materials fall into four sensitivity classes.Untreated wood and paper-based products are the most mold-prone, while glass, metals and alkaline concrete show strong resistance. The Finnish model also includes a “decline factor” that determines how quickly mold disappears under drying conditions—something that varies significantly between materials.Temperature and relative humidity at the interior surface are the critical drivers of mold onset.Simulations show that increasing ventilation (ACH) or indoor temperature alone helps, but the most effective mitigation occurs when both measures are combined.The case study on a historic bay window illustrates that mold problems often originate from cold surfaces created by thermal bridges. Addressing these locally (e.g., insulation improvements or detail redesign) can have a disproportionate impact on indoor mold risk, especially when paired with modest mechanical ventilation.Mold prevention is not only about lowering indoor humidity—it’s about controlling surface conditions.Combining ventilation, sufficient heating and better thermal bridge design can shift a building from persistent mold risk to long-term prevention. For heritage buildings with sensitive materials, these integrated strategies are essential for preserving both the indoor climate and the building fabric.
Find the recordings and full presentations here.